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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP36N055HHE, NP36N055IHE
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
These products are N-Channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP36N055HHE PACKAGE TO-251 TO-252
FEATURES
* Channel temperature 175 degree rated * Super low on-state resistance RDS(on) = 14 m MAX. (VGS = 10 V, ID = 18 A) * Low Ciss : Ciss = 2300 pF TYP. * Built-in gate protection diode
NP36N055IHE
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse)
Note1
(TO-251) 55 20 36 144 1.2 120 36 / 33 12 / 108 175 -55 to + 175 V V A A W W A mJ C C (TO-252)
VDSS VGSS ID(DC) ID(pulse) PT PT IAS EAS Tch Tstg
Total Power Dissipation (TA = 25 C) Total Power Dissipation (TC = 25 C) Single Avalanche Current Single Avalanche Energy Channel Temperature Storage Temperature Notes 1. PW 10 s, Duty cycle 1 %
Note2 Note2
2. Starting Tch = 25 C, RG = 25 , VGS = 20 V 0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 1.25 125 C/W C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14152EJ3V0DS00 (3rd edition) Date Published March 2001 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
(c)
1999,2000
NP36N055HHE, NP36N055IHE
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Threshold Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on) VGS(th) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 18 A VDS = VGS, ID = 250 A VDS = 10 V, ID = 18 A VDS = 55 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 25 V VGS = 0 V f = 1 MHz ID = 18 A VGS(on) = 10 V VDD = 28 V RG = 1 ID = 18 A VDD = 44 V VGS = 10 V IF = 36 A, VGS = 0 V IF = 36 A, VGS = 0 V di/dt = 100 A/s 2300 370 180 25 16 52 14 44 10 17 1.0 43 64 2.0 9 MIN. TYP. 11 3.0 18 10 10 3500 560 320 54 39 100 35 66 MAX. 14 4.0 UNIT m V S
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD VDS
90 % 90 % 10 % 10 %
VGS
Wave Form
0
10 %
VGS(on)
90 %
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1 %
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D14152EJ3V0DS
NP36N055HHE, NP36N055IHE
TYPICAL CHARACTERISTICS (TA = 25C)
Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 140 Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
100 80 60 40 20 0
120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200
0
25
50
75
100 125 150 175 200
TC - Case Temperature - C
TC - Case Temperature - C Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR 120
5
Figure3. FORWARD BIAS SAFE OPERATING AREA 1000 ID(pulse) ID(DC)
DC
1m s
PW
ID - Drain Current - A
100
d ite V) Lim 0 n) = 1 o S( S RD t V G (a
10
=1
EAS- Single Avalanche Energy - mJ
108 mJ 100 80 60 40 20 12 mJ 0 25 50 75 100 125 150 175 IAS = 33 A 36 A
0 s
0
s
10
P Limowe ite r D d iss
ipa
tio
n
1 TC = 25C Single Pulse 1 10 100
0.1 0.1
VDS - Drain to Source Voltage - V
Starting Tch - Starting Channel Temperature - C
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - C/W
1000 Rth(ch-A) = 125 C/W
100
10
1
Rth(ch-C) = 1.25 C/W
0.1 Single Pulse TC = 25C 100 1m 10 m 100 m 1 10 100 1000
0.01 10
PW - Pulse Width - s
Data Sheet D14152EJ3V0DS
3
NP36N055HHE, NP36N055IHE
Figure6. FORWARD TRANSFER CHARACTERISTICS 100 Pulsed
Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 200
ID - Drain Current - A
ID - Drain Current - A
10
160 120 80 40 VGS = 10 V
1 TA = -55C 25C 75C 150C 175C
0.1
0.01
1
2
3
4
5
6
0
0
1
2
3
4
VGS - Gate to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS=10V Pulsed 10 TA = 175C 75C 25C -55C
VDS - Drain to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - m
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 40 Pulsed 35 30 25 20 15 10 5 0 0 5 10 15 20 ID = 18 A
| yfs | - Forward Transfer Admittance - S
1
0.1
0.01 0.01
0.1
1
10
100
ID - Drain Current - A
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 4.0 VDS = VGS ID = 250 A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 -50 0 50 100 150
RDS(on) - Drain to Source On-state Resistance - m
40 35 30 25 20 15 10 5 0 1 10 100 VGS = 10 V
Pulsed
1000
VGS(th) - Gate to Source Threshold Voltage - V
Figure10. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
Tch - Channel Temperature - C
4
Data Sheet D14152EJ3V0DS
NP36N055HHE, NP36N055IHE
RDS(on) - Drain to Source On-state Resistance - m
35 30 25 20 VGS = 10 V 15 10 5 ID = 18 A 0 -50 0 50 100 150
ISD - Diode Forward Current - A
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 45 Pulsed 40
Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100
Pulsed
10
VGS = 10 V VGS = 0 V
1
0.1
0.01
0
0.5
1.0
1.5
Tch - Channel Temperature - C
Figure14. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
VSD - Source to Drain Voltage - V
Figure15. SWITCHING CHARACTERISTICS
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 V f = 1 MHz Ciss
td(on), tr, td(off), tf - Switching Time - ns
10000
1000 tf 100 td(off) td(on) tr 10
1000 Coss 100 Crss
10 0.1
1
10
100
1 0.1
1
10
100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
Figure16. REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000
trr - Reverse Recovery Time - ns
di/dt = 100 A/s VGS = 0 V
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS 80
VDS - Drain to Source Voltage - V
16 14 VDD = 44 V 28 V 11 V 12 VGS 10 8 6 4 VDS ID = 36 A 2 30 40 50 60 70 80 0
VGS - Gate to Source Voltage - V
70 60 50 40 30 20 10 0 0 10
100
10
1 0.1
1.0
10
100
20
IF - Drain Current - A
QG - Gate Charge - nC
Data Sheet D14152EJ3V0DS
5
NP36N055HHE, NP36N055IHE
PACKAGE DRAWINGS (Unit : mm)
1)TO-251 (MP-3)
6.50.2 5.00.2
1.5+0.2 -0.1
2)TO-252 (MP-3Z)
2.30.2
0.50.1
6.50.2 5.00.2
1.5+0.2 -0.1
2.30.2 0.50.1
1.60.2
5.50.2
13.7 MIN.
4.3 MAX.
0.8 TYP.
0.5+0.2 -0.1 2.3 TYP. 2.3 TYP.
0.75 TYP.
0.5+0.2 -0.1
2.3 TYP.
2.3 TYP.
0.8 TYP.
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
6
Data Sheet D14152EJ3V0DS
0.7 TYP.
1.10.2
2.0 MIN.
1.10.2
7.0 MIN.
0.9 MAX.
10.0 MAX.
0.8 MAX.
1.0 MIN. 1.8 TYP.
5.50.2
NP36N055HHE, NP36N055IHE
[MEMO]
Data Sheet D14152EJ3V0DS
7
NP36N055HHE, NP36N055IHE
* The information in this document is current as of March, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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